电磁注入:故障模型和局部性

2015 Workshop on Fault Diagnosis and Tolerance in Cryptography (FDTC) Pub Date : 2015-09-13 DOI:10.1109/FDTC.2015.9

S. Ordas, L. Guillaume-Sage, P. Maurine

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引用次数: 30

摘要

电磁注入近年来成为断层注入的有效介质。本文分析了集成电路对电磁脉冲的磁化率。强调了电磁脉冲注入产生的故障不是定时故障，而是对应于本文提出的另一种模型。该模型还可以解释以前通信中引入的实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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EM Injection: Fault Model and Locality

EM injection recently emerged as an effective medium for fault injection. This paper presents an analysis of the IC susceptibility to EM pulses. It highlights that faults produced by EM pulse injection are not timing faults but correspond to a different model which is presented in this paper. This model also allows to explain experimental results introduced in former communications.

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2015 Workshop on Fault Diagnosis and Tolerance in Cryptography (FDTC)

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