{"title":"采用15个晶体管的8位全加法器设计,采用新颖的5个晶体管XNOR门","authors":"P. Sritha, P. Geethamani","doi":"10.1109/ICACCE46606.2019.9080002","DOIUrl":null,"url":null,"abstract":"Here, a new hybrid 8-bit full adder configuration utilizing both correlative metal-oxide-semiconductor (CMOS) reason and transmission gate judgment is described. The plan was first executed for 1 bit and after that stretched out for 32 bit likewise yet in this paper, the structure was actualized for 8-bit. The circuit was executed utilizing Cadence Virtuoso tools in 45-nm technology at 1.2-V and 1.8-V. Execution parameters for example power, delay, and transistor count up of the full adder contrasted and the officially existing paper. For 1.2-V supply at 45-nm technology, the normal power utilization 31.523nW was observed to be amazingly low with low defer 9.995ns resultant as of the predetermined inclusion of very frail CMOS inverters combined with well-built transmission gates designed for 1-bit. The plan was additionally stretched out for actualizing 8-bit full adder at 1.2-V (1.8-V) along with experimental towards only 241.0nW (556.1nW) power and −1.747ps (9.217ps) delay at 45-nm technology. Proposed full adder has been contrasted and the previously detailed circuits and the power utilization indicate better outcomes by enhancing XNOR gate.","PeriodicalId":317123,"journal":{"name":"2019 International Conference on Advances in Computing and Communication Engineering (ICACCE)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Eight Bit Full Adder Design Using Fifteen Transistors With Novel Five Transistors XNOR Gate\",\"authors\":\"P. Sritha, P. Geethamani\",\"doi\":\"10.1109/ICACCE46606.2019.9080002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here, a new hybrid 8-bit full adder configuration utilizing both correlative metal-oxide-semiconductor (CMOS) reason and transmission gate judgment is described. The plan was first executed for 1 bit and after that stretched out for 32 bit likewise yet in this paper, the structure was actualized for 8-bit. The circuit was executed utilizing Cadence Virtuoso tools in 45-nm technology at 1.2-V and 1.8-V. Execution parameters for example power, delay, and transistor count up of the full adder contrasted and the officially existing paper. For 1.2-V supply at 45-nm technology, the normal power utilization 31.523nW was observed to be amazingly low with low defer 9.995ns resultant as of the predetermined inclusion of very frail CMOS inverters combined with well-built transmission gates designed for 1-bit. The plan was additionally stretched out for actualizing 8-bit full adder at 1.2-V (1.8-V) along with experimental towards only 241.0nW (556.1nW) power and −1.747ps (9.217ps) delay at 45-nm technology. Proposed full adder has been contrasted and the previously detailed circuits and the power utilization indicate better outcomes by enhancing XNOR gate.\",\"PeriodicalId\":317123,\"journal\":{\"name\":\"2019 International Conference on Advances in Computing and Communication Engineering (ICACCE)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Advances in Computing and Communication Engineering (ICACCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICACCE46606.2019.9080002\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Advances in Computing and Communication Engineering (ICACCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICACCE46606.2019.9080002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Eight Bit Full Adder Design Using Fifteen Transistors With Novel Five Transistors XNOR Gate
Here, a new hybrid 8-bit full adder configuration utilizing both correlative metal-oxide-semiconductor (CMOS) reason and transmission gate judgment is described. The plan was first executed for 1 bit and after that stretched out for 32 bit likewise yet in this paper, the structure was actualized for 8-bit. The circuit was executed utilizing Cadence Virtuoso tools in 45-nm technology at 1.2-V and 1.8-V. Execution parameters for example power, delay, and transistor count up of the full adder contrasted and the officially existing paper. For 1.2-V supply at 45-nm technology, the normal power utilization 31.523nW was observed to be amazingly low with low defer 9.995ns resultant as of the predetermined inclusion of very frail CMOS inverters combined with well-built transmission gates designed for 1-bit. The plan was additionally stretched out for actualizing 8-bit full adder at 1.2-V (1.8-V) along with experimental towards only 241.0nW (556.1nW) power and −1.747ps (9.217ps) delay at 45-nm technology. Proposed full adder has been contrasted and the previously detailed circuits and the power utilization indicate better outcomes by enhancing XNOR gate.