{"title":"扩散量子阱垂直腔法布里-珀罗反射调制器","authors":"W. Choy, S.F. Ip, E. Li","doi":"10.1109/TENCON.1995.496343","DOIUrl":null,"url":null,"abstract":"This is a first report to use diffused quantum well (DFQW) as the active cavity of the Fabry-Perot reflection modulator. Apart from the simple fabrication process of the DFQW, this material system provides a wavelength tuning range and improves the modulation properties of the device which thus is competitive with the same kind of modulator.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Diffused-quantum-well vertical cavity Fabry-Perot reflection modulator\",\"authors\":\"W. Choy, S.F. Ip, E. Li\",\"doi\":\"10.1109/TENCON.1995.496343\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This is a first report to use diffused quantum well (DFQW) as the active cavity of the Fabry-Perot reflection modulator. Apart from the simple fabrication process of the DFQW, this material system provides a wavelength tuning range and improves the modulation properties of the device which thus is competitive with the same kind of modulator.\",\"PeriodicalId\":425138,\"journal\":{\"name\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.1995.496343\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This is a first report to use diffused quantum well (DFQW) as the active cavity of the Fabry-Perot reflection modulator. Apart from the simple fabrication process of the DFQW, this material system provides a wavelength tuning range and improves the modulation properties of the device which thus is competitive with the same kind of modulator.