{"title":"数字VLSI集成电路模块动态开关电流建模及片上测量验证","authors":"A. Gstottner, J. Kruppa, M. Huemer","doi":"10.1109/EMCZUR.2007.4388181","DOIUrl":null,"url":null,"abstract":"Tough requirements on electromagnetic compatibility (EMC) of electronic equipment forces the demand for low electromagnetic emission (EME) of integrated circuit devices. To enable an efficient application of measures reducing the noise emission, automatic model generation tools are needed to be part of the design flow. In this paper we present a method for high level modeling of dynamic switching currents of complex digital IC modules as well as the verification of the simulation results with a high speed on-chip current and voltage sensor. The current profile calculation for single modules is based on statistical approaches, and parasitic effects of cell interconnects are modeled by utilizing signal processing methods.","PeriodicalId":397061,"journal":{"name":"2007 18th International Zurich Symposium on Electromagnetic Compatibility","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Modeling of dynamic switching currents of digital VLSI IC modules and verification by on-chip measurement\",\"authors\":\"A. Gstottner, J. Kruppa, M. Huemer\",\"doi\":\"10.1109/EMCZUR.2007.4388181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tough requirements on electromagnetic compatibility (EMC) of electronic equipment forces the demand for low electromagnetic emission (EME) of integrated circuit devices. To enable an efficient application of measures reducing the noise emission, automatic model generation tools are needed to be part of the design flow. In this paper we present a method for high level modeling of dynamic switching currents of complex digital IC modules as well as the verification of the simulation results with a high speed on-chip current and voltage sensor. The current profile calculation for single modules is based on statistical approaches, and parasitic effects of cell interconnects are modeled by utilizing signal processing methods.\",\"PeriodicalId\":397061,\"journal\":{\"name\":\"2007 18th International Zurich Symposium on Electromagnetic Compatibility\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 18th International Zurich Symposium on Electromagnetic Compatibility\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMCZUR.2007.4388181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 18th International Zurich Symposium on Electromagnetic Compatibility","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMCZUR.2007.4388181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of dynamic switching currents of digital VLSI IC modules and verification by on-chip measurement
Tough requirements on electromagnetic compatibility (EMC) of electronic equipment forces the demand for low electromagnetic emission (EME) of integrated circuit devices. To enable an efficient application of measures reducing the noise emission, automatic model generation tools are needed to be part of the design flow. In this paper we present a method for high level modeling of dynamic switching currents of complex digital IC modules as well as the verification of the simulation results with a high speed on-chip current and voltage sensor. The current profile calculation for single modules is based on statistical approaches, and parasitic effects of cell interconnects are modeled by utilizing signal processing methods.