{"title":"核心存储器的温度补偿","authors":"A. H. Ashley, E. Cohler, W. Humphrey","doi":"10.1145/1460299.1460322","DOIUrl":null,"url":null,"abstract":"For fixed installation, it is often possible to control the temperature of ferrite core memories within narrow limits. However, in a small mobile computer designed to operate over world-wide conditions, this control is not feasible because of the added weight, volume, and cost encountered. A memory designed for such application has been temperature compensated by the use of temperature sensitive components in the current sources to the X-Y drivers and in the power supplies for the Z drivers. In addition, core derived strobing has provided peaking time compensation for the sense amplifiers as changes in transistor characteristics delay or advance drive current. This compensation permits operation of an 8192 word 38-bit transistorized memory running at an 8 microsecond cycle time in an ambient environment which may vary between −30°C and +55°C.","PeriodicalId":281900,"journal":{"name":"IRE-AIEE-ACM '59 (Eastern)","volume":"39 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1899-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Temperature compensation for a core memory\",\"authors\":\"A. H. Ashley, E. Cohler, W. Humphrey\",\"doi\":\"10.1145/1460299.1460322\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For fixed installation, it is often possible to control the temperature of ferrite core memories within narrow limits. However, in a small mobile computer designed to operate over world-wide conditions, this control is not feasible because of the added weight, volume, and cost encountered. A memory designed for such application has been temperature compensated by the use of temperature sensitive components in the current sources to the X-Y drivers and in the power supplies for the Z drivers. In addition, core derived strobing has provided peaking time compensation for the sense amplifiers as changes in transistor characteristics delay or advance drive current. This compensation permits operation of an 8192 word 38-bit transistorized memory running at an 8 microsecond cycle time in an ambient environment which may vary between −30°C and +55°C.\",\"PeriodicalId\":281900,\"journal\":{\"name\":\"IRE-AIEE-ACM '59 (Eastern)\",\"volume\":\"39 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1899-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IRE-AIEE-ACM '59 (Eastern)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1460299.1460322\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IRE-AIEE-ACM '59 (Eastern)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1460299.1460322","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
For fixed installation, it is often possible to control the temperature of ferrite core memories within narrow limits. However, in a small mobile computer designed to operate over world-wide conditions, this control is not feasible because of the added weight, volume, and cost encountered. A memory designed for such application has been temperature compensated by the use of temperature sensitive components in the current sources to the X-Y drivers and in the power supplies for the Z drivers. In addition, core derived strobing has provided peaking time compensation for the sense amplifiers as changes in transistor characteristics delay or advance drive current. This compensation permits operation of an 8192 word 38-bit transistorized memory running at an 8 microsecond cycle time in an ambient environment which may vary between −30°C and +55°C.
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