带侧光栅的1550nm InAs/InGaAlAs量子点分布反馈激光器的制备及温度特性

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930377

R. Kaneko, R. Katsuhara, R. Yabuki, A. Matsumoto, K. Akahane, Y. Matsushima, H. Ishikawa, K. Utaka

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引用次数: 1

摘要

采用应变补偿技术，利用生长在InP(311)B衬底上的1550nm InAs/InGaAlAs量子点(QD)晶圆，采用两步刻蚀的新方法制备了具有侧光栅的分布式反馈(DFB)激光器，并通过AR/HR小面涂层实现了侧模抑制比(SMSR)为39 dB的室温连续波单模工作。阈值电流密度为2.33 kA/cm2，无需散热处理也可实现高达80℃的高温工作。特征温度系数为113 K，波长位移为0.05 nm/K。

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Fabrication and Temperature Characteristics of 1550nm InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers with Side Grating

Distributed feedback (DFB) lasers with side gratings were fabricated by a novel method of two step etching using 1550nm InAs/InGaAlAs quantum dot (QD) wafers grown on InP(311)B substrates with strain compensation technique, and room temperature continuous wave (CW) single-mode operation with a side mode suppression ratio (SMSR) of 39 dB was achieved by AR/HR facet coating. The threshold current density was 2.33 kA/cm2, and high temperature operation up to 80 °C was also achieved without heat dissipation treatment. The characteristic temperature coefficient was 113 K, and the wavelength shift was 0.05 nm/K.

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2022 Compound Semiconductor Week (CSW)

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