基于65nm CMOS技术的v波段相控阵系统23.3 dB增益和3.4 dB NF的紧凑LNA

Shulan Chen, Lei Zhang, Yan Wang
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引用次数: 0

摘要

本文提出了一种采用稳定性增强和优化变压器匹配技术的小型v波段低噪声放大器。LNA由两个伪差分共源级结构组成。每级均采用中和电容技术,优化噪声系数,并采用变压器匹配网络,占地面积小。所提出的LNA采用65纳米CMOS技术实现,在1.2 V电源下消耗38 mW的直流功率。放大器实现23.3 dB增益,3db带宽在48.3和55.8 GHz之间。在52 GHz时,最佳噪声系数(NF)为3.4 dB,在整个频段内小于3.65 dB。得益于紧凑的变压器匹配网络,LNA的核心芯片尺寸仅为0.09 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Compact LNA with 23.3 dB Gain and 3.4 dB NF for V-Band Phased Array Systems in 65-nm CMOS Technology
This paper presents a compact V-band low noise amplifier (LNA) employed stability enhancement and optimized transformer-based matching technique. The LNA is composed of two pseudo-difference common-source stages structure. Each stage adopts the neutralizing capacitor technology to optimize the noise figure and employ the transformer-matching network for a compact footprint. The proposed LNA is implemented in a 65-nm CMOS technology and consume a DC power of 38 mW at a sup-ply of 1.2 V. The amplifier achieves a 23.3 dB gain with a 3-dB bandwidth between 48.3 and 55.8 GHz. At 52 GHz, the optimum noise figure (NF) is 3.4 dB and is below than 3.65 dB over the whole band. Thanks to the compact transformer-based matching network, the LNA achieves a core chip size of only 0.09 mm2,
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