T2A:教程:CMOS电路和系统的高级ESD保护设计

M. Ker
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引用次数: 0

摘要

为了减轻电子产品的重量,将更多的功能集成到电子产品中,以及降低电子产品的功耗,CMOS技术已经发展到纳米尺度,以实现电子系统的VLSI/SoC。采用纳米尺寸的晶体管,在低于1v的电源下工作时,MOSFET的栅极氧化层厚度仅为10~15Å。这种较薄的栅极氧化物很容易被静电放电(ESD)事件破坏,而静电放电事件在我们的环境中经常发生,电压水平在几百伏甚至几千伏。集成电路(ic)在组装、测试、封装和应用过程中承受这种ESD应力的能力较弱。为了验证IC产品在安全应用中的ESD可靠性,已经制定了一些行业ESD测试标准,如人体模型(HBM)和充电器件模型(CDM),以验证IC产品的ESD稳健性。此外,在IEC 61000-4-2标准中,电子产品在空气放电模式下受到ESD枪的电击,ESD电压甚至高达15kV。如何设计片上ESD保护电路,有效地保护由纳米级CMOS器件实现的集成电路,是集成电路行业面临的一个相当艰巨的挑战。片内ESD保护电路必须包含在芯片设计的开始阶段。在本教程中,简要介绍了ESD问题和IC产品的测试标准,并提供了一些实际IC产品的失效分析图片,以说明ESD对IC产品的影响。本文将介绍片上ESD保护电路的基本设计概念。本文将介绍一些适用于高速I/O和RF电路的ESD保护设计。着重介绍了利用有源电源轨ESD钳位电路实现全芯片ESD保护的方法。本文将特别讨论在纳米级CMOS工艺中实现的有源电源轨ESD钳位电路的附加考虑。元器件级ESD防护之后,将简要讨论系统级ESD防护设计。CMOS集成电路的ESD保护不仅是工艺问题,而且高度依赖于设计问题,这已经成为集成电路设计人员需要了解的重要课题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SESSION T2A: Tutorial: Advanced ESD protection design for CMOS circuits and systems
To reduce the weight of electronic products, to integrate more functions into the electronic products, as well as to reduce the power consumption of electronic products, the CMOS technology has been developed into nanometer scale to realize VLSI/SoC for electronic systems. With the transistors in the nano-scale dimension, the gate-oxide thickness of MOSFET is only 10~15Å for operating with sub-1V power supply. Such thinner gate oxide is very easily ruptured by electrostatic discharge (ESD) events, which frequently happen in our environments with the voltage level of hundreds or even thousands volts. The integrated circuits (ICs) are weaker to sustain such ESD stresses during the assembly, testing, package, and the applications. To verify the ESD reliability of IC products for safe applications, there are already some industry ESD test standards developed, such as Human Body Model (HBM) and Charged Device Model (CDM), to verify the ESD robustness of IC products. Besides, in the IEC 61000-4-2 standard, the electronic products are zapped by the ESD gun with ESD voltage of even up to 15kV in the air-discharge mode. How to design the on-chip ESD protection circuits to effectively protect the integrated circuits realized by the nano-scale CMOS devices is a quite difficult challenge to IC industry. The on-chip ESD protection circuit must be included in the beginning phase of chip design. In this Tutorial, a brief introduction on ESD issue and test standards to IC products is presented with some failure analysis pictures from real IC products to demonstrate the impact of ESD on IC products. The basic design concept for on-chip ESD protection circuit will be presented. Some useful ESD protection designs for high-speed I/O and RF circuits will be mentioned. To achieve the whole-chip ESD protection by using the active power-rail ESD clamp circuit will be emphasized. Additional consideration on the active power-rail ESD clamp circuit realized in the nanoscale CMOS processes will be especially addressed. After the component-level ESD protection, the system-level ESD protection design will be brief discussed. ESD protection for CMOS ICs is not only the process issue but also highly dependent to the design issue, which has been an important topic that the IC designers need to know.
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