{"title":"一个0.5- 3ghz的I/Q交错直接数字射频调制器,在40nm CMOS调制带宽高达320mhz","authors":"Yiyu Shen, R. Bootsman, M. Alavi, L. D. Vreede","doi":"10.1109/CICC48029.2020.9075949","DOIUrl":null,"url":null,"abstract":"This paper presents a wideband, $2\\times 12$ -bit I/Q interleaved direct-digital RF modulator (DDRM) realized in 40 nm CMOS technology. The proposed digital-intensive quadrature upconverter features an advanced I/Q-mapping unit cell to boost RF power, in-band linearity, and out-of-band spectral purity. The modulator provides more than 14 dBm RF peak output power. It achieves an ACLR of -52 dBc and an EVM of -40 dB when applying a 20 MHz 256 QAM signal at 2.4 GHz. When applying a 320 MHz 256 QAM signal at 2.4 GHz, the measured ACLR and EVM are better than -43 dBc and -32 dB, respectively, without applying any digital pre-distortion.","PeriodicalId":409525,"journal":{"name":"2020 IEEE Custom Integrated Circuits Conference (CICC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 0.5-3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS\",\"authors\":\"Yiyu Shen, R. Bootsman, M. Alavi, L. D. Vreede\",\"doi\":\"10.1109/CICC48029.2020.9075949\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a wideband, $2\\\\times 12$ -bit I/Q interleaved direct-digital RF modulator (DDRM) realized in 40 nm CMOS technology. The proposed digital-intensive quadrature upconverter features an advanced I/Q-mapping unit cell to boost RF power, in-band linearity, and out-of-band spectral purity. The modulator provides more than 14 dBm RF peak output power. It achieves an ACLR of -52 dBc and an EVM of -40 dB when applying a 20 MHz 256 QAM signal at 2.4 GHz. When applying a 320 MHz 256 QAM signal at 2.4 GHz, the measured ACLR and EVM are better than -43 dBc and -32 dB, respectively, without applying any digital pre-distortion.\",\"PeriodicalId\":409525,\"journal\":{\"name\":\"2020 IEEE Custom Integrated Circuits Conference (CICC)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Custom Integrated Circuits Conference (CICC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC48029.2020.9075949\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Custom Integrated Circuits Conference (CICC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC48029.2020.9075949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.5-3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS
This paper presents a wideband, $2\times 12$ -bit I/Q interleaved direct-digital RF modulator (DDRM) realized in 40 nm CMOS technology. The proposed digital-intensive quadrature upconverter features an advanced I/Q-mapping unit cell to boost RF power, in-band linearity, and out-of-band spectral purity. The modulator provides more than 14 dBm RF peak output power. It achieves an ACLR of -52 dBc and an EVM of -40 dB when applying a 20 MHz 256 QAM signal at 2.4 GHz. When applying a 320 MHz 256 QAM signal at 2.4 GHz, the measured ACLR and EVM are better than -43 dBc and -32 dB, respectively, without applying any digital pre-distortion.