在250 ~ 400℃温度下形成CIS的反应分析

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI:10.1109/PVSC.1996.564294

N. Orbey, H. Hichri, R. Birkmire, T. Russell

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引用次数: 4

摘要

介绍了铜铟层硒化生成二硒化铜铟的化学反应分析。在250、325和400℃的稀H/sub 2/Se气氛下，在管状层流反应器中进行了时间渐进硒化。用x射线衍射和原子吸收光谱对反应膜进行了分析。确定了反应膜中存在的化学物质，并提出了成膜的反应网络。对时间渐进硒化的数据进行分析，得到物种浓度分布。假设了反应速率表达式，建立了硒化反应的数学模型。将模型的行为与实验确定的物质浓度进行比较，得到了各温度下的反应速率常数和活化能。这些信息对于商业规模的硒化反应器的设计和过程控制是必要的。

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Reaction analysis of the formation of CIS at temperatures from 250 to 400/spl deg/C

A chemical reaction analysis of the selenization of copper indium layers to form copper indium diselenide is presented. Time progressive selenizations were carried out in a tubular laminar flow reactor in a dilute H/sub 2/Se atmosphere at 250, 325 and 400/spl deg/C. The reacted films were analyzed by X-ray diffraction and atomic absorption spectroscopy. The chemical species present in the reacted films were identified and a reaction network for film formation is proposed. The data from time progressive selenizations were analyzed to obtain species concentration profiles. Rate expressions were postulated and a mathematical model for the selenization was developed. The behavior of the model is compared with the experimentally determined species concentrations to obtain specific reaction rate constants at each temperature and the activation energies. This information is needed for the design and process control of commercial scale selenization reactors.

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Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996

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