顶部表面钝化制备SGOI纳米线生物传感器的灵敏度增强

2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2012-03-05 DOI:10.1109/NEMS.2012.6196842

Kow-Ming Chang, Chu-Feng Chen, C. Lai, C. Hsieh, Chin-Ning Wu, Yu-Bin Wang, Chung-Hsien Liu

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引用次数: 1

摘要

通过氧化Ge缩合来增加绝缘体上硅锗(SGOI)中Ge的含量，可以显著提高空穴迁移率。该效应可用于提高SGOI纳米线的灵敏度。然而，我们之前的研究发现，当Ge分数增加超过20%时，SGOI纳米线的灵敏度就会下降，因为当Ge分数高时，SiGe的表面状态是不稳定的。在Si0.8Ge0.2纳米线上沉积了一层顶部表面钝化SiO2层，成功地将其灵敏度提高了约1.3倍，是没有顶部钝化层的纳米线样品。

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Sensitivity enhancement in SGOI nanowire biosensor fabricated by top surface passivation

Increasing the fraction of Ge in SiGe-on-Insulator (SGOI) using Ge condensation by oxidation significantly increases hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowire. However, our previous studies found that the sensitivity of an SGOI nanowire is degraded as the Ge fraction increases over 20%, because of the surface state of SiGe is unstable when the Ge fraction is high. In this work, a top surface passtivation SiO2 layer was deposited on an Si0.8Ge0.2 nanowire and successfully improve its sensitivity around 1.3 times that of the nanowire sample without top a passivation layer.

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2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

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