福勒诺德海姆诱导MOS二极管发光

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095) Pub Date : 2000-03-13 DOI:10.1109/ICMTS.2000.844435

P. Bellutti, G. Dalla Betta, N. Zorzi, R. Versari, A. Pieracci, B. Riccò, M. Manfredi, G. Soncini

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引用次数: 3

摘要

利用特别设计的测试结构，研究了偏压在Fowler-Nordheim体制下的MOS隧道二极管的光发射，该测试结构避免了多晶硅层的遮挡效应，从而允许从Si衬底有效地发射光。测量到的发射光的光子能量分布与热载子辐射模型一致。

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Fowler Nordheim induced light emission from MOS diodes

Light emission from MOS tunnel diodes biased in the Fowler-Nordheim regime has been investigated by using especially designed test structures which avoid the obscuring effect of the poly-Si layer, thus allowing an efficient light emission from the Si substrate. The measured photon energy distribution of the emitted light is consistent with a hot carrier radiation model.

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ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)

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