{"title":"大功率MTO晶闸管的解析设计","authors":"T. Plum, R. D. De Doncker","doi":"10.1109/PEDS.2007.4487684","DOIUrl":null,"url":null,"abstract":"The design of semiconductor devices is usually performed with finite element methods. In this paper an analytical approach for the design of a high- power MOS turn-off thyristor (MTO) is presented. The model enables the calculation of on-state voltage drop and turn-off losses analytically. The results are compared to a finite-element (FE) model of the MTO. The analytical model offers a high degree of accuracy together with fast calculation times and can therefore be used to find an optimized device design for a given application.","PeriodicalId":166704,"journal":{"name":"2007 7th International Conference on Power Electronics and Drive Systems","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analytical Design of High-Power MTO Thyristors\",\"authors\":\"T. Plum, R. D. De Doncker\",\"doi\":\"10.1109/PEDS.2007.4487684\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design of semiconductor devices is usually performed with finite element methods. In this paper an analytical approach for the design of a high- power MOS turn-off thyristor (MTO) is presented. The model enables the calculation of on-state voltage drop and turn-off losses analytically. The results are compared to a finite-element (FE) model of the MTO. The analytical model offers a high degree of accuracy together with fast calculation times and can therefore be used to find an optimized device design for a given application.\",\"PeriodicalId\":166704,\"journal\":{\"name\":\"2007 7th International Conference on Power Electronics and Drive Systems\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 7th International Conference on Power Electronics and Drive Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PEDS.2007.4487684\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 7th International Conference on Power Electronics and Drive Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEDS.2007.4487684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design of semiconductor devices is usually performed with finite element methods. In this paper an analytical approach for the design of a high- power MOS turn-off thyristor (MTO) is presented. The model enables the calculation of on-state voltage drop and turn-off losses analytically. The results are compared to a finite-element (FE) model of the MTO. The analytical model offers a high degree of accuracy together with fast calculation times and can therefore be used to find an optimized device design for a given application.
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