W. Stanchina, T. Liu, D. Rensch, P. Macdonald, M. Hafizi, W. Hooper, M. Lui, Y. K. Allen, T. V. Kargodorian, R. Wong-Quen, F. Williams
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The authors report the experimental characteristics obtained from AlInAs/GaInAs/InP double heterojunction bipolar transistors (DHBTs) grown by gas source molecular beam epitaxy. They describe the fabrication and measured performance of two AlInAs/GaInAs/InP DHBT structures, one having a relatively thin 390 nm collector and the other having a relatively thick 1200 nm collector. Their performance results are presented within the context of their application to linear ICs and microwave power amplification. The results include the first reported microwave power measurements on this InP-based DHBT structure featuring a continuous wave output power density of 3.3 W/mm at 4 GHz.<>
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