低相位噪声,宽调谐范围20GHz磁耦合哈特利压控振荡器在28nm CMOS技术

Daniel Reiter, Hao Li, H. Knapp, Jonas Kammerer, S. Majied, Badou Sene, N. Pohl
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引用次数: 3

摘要

提出了一种采用28nm CMOS技术制造的低相位噪声、宽调谐范围的20GHz磁耦合哈特利vco,针对77/79GHz雷达应用。该VCO采用哈特利VCO架构,设计和优化了低相位噪声和大频率调谐范围。实现了2.2GHz的宽调谐范围和-113.8dBc/Hz@1MHz的最佳相位噪声。据作者所知,这是先进CMOS技术中最好的压控振荡器相位噪声。此外,由于在VCO核心顶部实现了电流源,该VCO表现出小于±80 MHz $/V$的优异推压性能。VCO核心的面积为0.038 mm $^{2}$,从1.8V电源消耗50mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Low Phase Noise, Wide Tuning Range 20GHz Magnetic-Coupled Hartley-VCO in a 28nm CMOS Technology
A low phase noise, wide tuning range 20GHz magnetic-coupled Hartley-VCO fabricated in a 28nm CMOS technology is presented and targeted for 77/79GHz radar applications. The VCO is designed and optimized for low phase noise and large frequency tuning range by using a Hartley-VCO architecture. A wide tuning range of 2.2GHz and a best phase noise of -113.8dBc/Hz@1MHz have been achieved. To the best of authors’ knowledge, this is the best VCO phase noise presented in an advanced CMOS technology. Furthermore, the VCO shows an excellent pushing performance of less than ± 80 MHz $/V$ due to the implemented current source on top of the VCO core. The VCO core has an area of 0.038 mm $^{2}$ and consumes 50mA from a 1.8V supply.
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