{"title":"极性可调铁电场效应晶体管在高温下的性能评价第1部分","authors":"P. Pandey, H. Kaur","doi":"10.1109/ICDCS48716.2020.243574","DOIUrl":null,"url":null,"abstract":"In the present article, a comprehensive study has been carried out to assess the high temperature performance of Polarity Tunable-Ferroelectric-Field Effect Transistor (PT-FE-FET). Owing to the presence of ferroelectric layer in gate-stack of PT-FE-FET, the device offers super-steep subthreshold characteristics along with steep surface potential characteristics and ON-state current for both n- and p- operational modes. Even at elevated temperatures, the proposed device continues to render superior device performance and is immune towards high temperatures such as 400 K. Thus, the proposed device is a suitable contender for energy-efficient high temperature applications.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance Assessment of Polarity Tunable- Ferroelectric-Field Effect Transistor at High Temperature —Part I\",\"authors\":\"P. Pandey, H. Kaur\",\"doi\":\"10.1109/ICDCS48716.2020.243574\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the present article, a comprehensive study has been carried out to assess the high temperature performance of Polarity Tunable-Ferroelectric-Field Effect Transistor (PT-FE-FET). Owing to the presence of ferroelectric layer in gate-stack of PT-FE-FET, the device offers super-steep subthreshold characteristics along with steep surface potential characteristics and ON-state current for both n- and p- operational modes. Even at elevated temperatures, the proposed device continues to render superior device performance and is immune towards high temperatures such as 400 K. Thus, the proposed device is a suitable contender for energy-efficient high temperature applications.\",\"PeriodicalId\":307218,\"journal\":{\"name\":\"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)\",\"volume\":\"89 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICDCS48716.2020.243574\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCS48716.2020.243574","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance Assessment of Polarity Tunable- Ferroelectric-Field Effect Transistor at High Temperature —Part I
In the present article, a comprehensive study has been carried out to assess the high temperature performance of Polarity Tunable-Ferroelectric-Field Effect Transistor (PT-FE-FET). Owing to the presence of ferroelectric layer in gate-stack of PT-FE-FET, the device offers super-steep subthreshold characteristics along with steep surface potential characteristics and ON-state current for both n- and p- operational modes. Even at elevated temperatures, the proposed device continues to render superior device performance and is immune towards high temperatures such as 400 K. Thus, the proposed device is a suitable contender for energy-efficient high temperature applications.
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