{"title":"具有温度漂移自补偿的硅磁二极管阵列的设计","authors":"Dongfeng Zhang, Deyi Kong, Yongchun Tao, Jianhua Shan","doi":"10.1109/ICIA.2005.1635070","DOIUrl":null,"url":null,"abstract":"The paper describes the design of a silicon magnetodiodes array with self-compensation for temperature drift, which is used for perpendicular-plane magnetic field sensing. Individual sensor cells comprise a pair of silicon magnetodiodes with differential structure. The magnetodiodes array can be fabricated on the surface of high-resistivity silicon on insulator (SOI) with the combination of IC process and micro-electro-mechanical system (MEMS) techniques, the proposed fabrication process is provided.","PeriodicalId":136611,"journal":{"name":"2005 IEEE International Conference on Information Acquisition","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of a silicon magnetodiodes array with self-compensation for temperature drift\",\"authors\":\"Dongfeng Zhang, Deyi Kong, Yongchun Tao, Jianhua Shan\",\"doi\":\"10.1109/ICIA.2005.1635070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper describes the design of a silicon magnetodiodes array with self-compensation for temperature drift, which is used for perpendicular-plane magnetic field sensing. Individual sensor cells comprise a pair of silicon magnetodiodes with differential structure. The magnetodiodes array can be fabricated on the surface of high-resistivity silicon on insulator (SOI) with the combination of IC process and micro-electro-mechanical system (MEMS) techniques, the proposed fabrication process is provided.\",\"PeriodicalId\":136611,\"journal\":{\"name\":\"2005 IEEE International Conference on Information Acquisition\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International Conference on Information Acquisition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIA.2005.1635070\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Conference on Information Acquisition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIA.2005.1635070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of a silicon magnetodiodes array with self-compensation for temperature drift
The paper describes the design of a silicon magnetodiodes array with self-compensation for temperature drift, which is used for perpendicular-plane magnetic field sensing. Individual sensor cells comprise a pair of silicon magnetodiodes with differential structure. The magnetodiodes array can be fabricated on the surface of high-resistivity silicon on insulator (SOI) with the combination of IC process and micro-electro-mechanical system (MEMS) techniques, the proposed fabrication process is provided.
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