在GaN和SiC中用于电信范围的室温固态量子发射体(会议报告)

Weibo Gao, Yu Zhou
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引用次数: 0

摘要

随需应变单光子发射器(spe)在广泛的量子技术中发挥着关键作用,包括量子计算、量子模拟、量子计量和量子通信。在量子网络和量子密钥分配协议中,光子被用作飞行量子比特,由于减少了光纤损耗,电信波长操作是首选。然而,尽管在开发各种触发SPE平台方面付出了巨大的努力,但在室温和电信波长下工作的触发SPE仍然缺乏可靠的来源。在这里,我们报告了一个在电信波长下工作的触发的、光学稳定的室温固态SPE。发射体具有高光子纯度(约5%的多光子事件)和创纪录的高亮度(约1.5 MHz)。发射归因于氮化镓(GaN)晶体中的局部缺陷。在技术成熟的半导体中嵌入高性能spe,对于片上量子模拟器和实际量子通信技术具有很大的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Room-temperature solid state quantum emitters in the telecom range in GaN and SiC (Conference Presentation)
On demand single photon emitters (SPEs) play a key role across a broad range of quantum technologies, including quantum computation, quantum simulation quantum metrology and quantum communications. In quantum networks and quantum key distribution protocols, where photons are employed as flying qubits, telecom wavelength operation is preferred due to the reduced fibre loss. However, despite the tremendous efforts to develop various triggered SPE platforms, a robust source of triggered SPEs operating at room temperature and the telecom wavelength is still missing. Here we report a triggered, optically stable, room temperature solid state SPE operating at telecom wavelengths. The emitters exhibit high photon purity (~ 5% multiphoton events) and a record-high brightness of ~ 1.5 MHz. The emission is attributed to localized defects in a gallium nitride (GaN) crystal. The high performance SPEs embedded in a technologically mature semiconductor are promising for on-chip quantum simulators and practical quantum communication technologies.
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