VFET的解析建模

2016 9th International Conference on Electrical and Computer Engineering (ICECE) Pub Date : 2016-12-01 DOI:10.1109/ICECE.2016.7853928

N. N. Chakraborty, Imam Al Razi, M. H. Bappy, M. R. Khan

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引用次数: 0

摘要

本文建立了真空场效应晶体管(VFET)的解析模型。推导了电压和电流驱动的数学表达式。基于空间电荷限制发射的最小电流密度，建立了电压驱动模型。通道电流的解析模型结合了空间电荷限制发射和Fowler-Nordheim隧穿等器件工作物理。用实际数据对分析模型进行了数值验证。提出的模型提供了评估真空装置特性和确定未来预测的机会。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analytical modeling of VFET

In this paper, an analytical model has been developed for the vacuum field-effect transistor (VFET). Mathematical expressions for drive in voltage and current has been derived. A drive in voltage has been modeled based on minimum current density for space charge limited emission. Analytical model of the channel current incorporates the device operating physics such as space charge limited emission and Fowler-Nordheim tunneling. The analytical model has been numerically verified with the practical data available. Proposed model provides the opportunity to evaluate the vacuum device characteristics and determine the future projections as well.

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来源期刊

2016 9th International Conference on Electrical and Computer Engineering (ICECE)

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