{"title":"一种在可见光波段工作的斯塔克位移电光器件","authors":"A. A. Chowdhury, M. Rashed, C. Maziar","doi":"10.1109/CORNEL.1993.303082","DOIUrl":null,"url":null,"abstract":"We report calculations of transition energies as a function of applied electric field for different combinations of GaP and AlP thicknesses. Most of the calculated red shifted transition energies fall within the orange/yellow region of the visible spectrum. These results may prove to be useful in designing Stark shift electrooptic devices operating in visible wavelengths.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A proposed Stark shift electrooptic device operating in visible wavelengths\",\"authors\":\"A. A. Chowdhury, M. Rashed, C. Maziar\",\"doi\":\"10.1109/CORNEL.1993.303082\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report calculations of transition energies as a function of applied electric field for different combinations of GaP and AlP thicknesses. Most of the calculated red shifted transition energies fall within the orange/yellow region of the visible spectrum. These results may prove to be useful in designing Stark shift electrooptic devices operating in visible wavelengths.<<ETX>>\",\"PeriodicalId\":129440,\"journal\":{\"name\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"83 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1993.303082\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A proposed Stark shift electrooptic device operating in visible wavelengths
We report calculations of transition energies as a function of applied electric field for different combinations of GaP and AlP thicknesses. Most of the calculated red shifted transition energies fall within the orange/yellow region of the visible spectrum. These results may prove to be useful in designing Stark shift electrooptic devices operating in visible wavelengths.<>