50瓦MMIC功率放大器设计，适用于2 GHz应用

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) Pub Date : 2004-06-06 DOI:10.1109/MWSYM.2004.1338820

M. Akkul, M. Sarfraz, J. Mayock, W. Bosch

{"title":"50瓦MMIC功率放大器设计，适用于2 GHz应用","authors":"M. Akkul, M. Sarfraz, J. Mayock, W. Bosch","doi":"10.1109/MWSYM.2004.1338820","DOIUrl":null,"url":null,"abstract":"In this paper the design and the measurement of a 2 GHz 50 Watt (CW) MMIC power amplifier (PA) are discussed. The authors believe that this is the most powerful MMIC implementation that has been reported. The amplifier utilizes a class-F combining structure and realized using the company internal 0.5 /spl mu/m GaAs pHEMT power process. The MMIC measure 10/spl times/10 mm/sup 2/ and delivers 50 Watts of CW power at an efficiency greater than 45% over more than 10% bandwidth at a nominal 12 V supply voltage. The amplifier gain is 21 dB throughout the operational band.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"10 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"50 watt MMIC power amplifier design for 2 GHz applications\",\"authors\":\"M. Akkul, M. Sarfraz, J. Mayock, W. Bosch\",\"doi\":\"10.1109/MWSYM.2004.1338820\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the design and the measurement of a 2 GHz 50 Watt (CW) MMIC power amplifier (PA) are discussed. The authors believe that this is the most powerful MMIC implementation that has been reported. The amplifier utilizes a class-F combining structure and realized using the company internal 0.5 /spl mu/m GaAs pHEMT power process. The MMIC measure 10/spl times/10 mm/sup 2/ and delivers 50 Watts of CW power at an efficiency greater than 45% over more than 10% bandwidth at a nominal 12 V supply voltage. The amplifier gain is 21 dB throughout the operational band.\",\"PeriodicalId\":334675,\"journal\":{\"name\":\"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)\",\"volume\":\"10 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2004.1338820\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2004.1338820","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

本文讨论了一种2ghz 50瓦(CW) MMIC功率放大器的设计与测量。作者认为这是目前所报道的最强大的MMIC实现。放大器采用f类组合结构，采用公司内部0.5 /spl μ m GaAs pHEMT功率工艺实现。MMIC测量10/spl倍/10 mm/sup 2/，在标称12v电源电压下提供50瓦的连续波功率，效率大于45%，带宽大于10%。放大器在整个操作频带的增益为21 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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50 watt MMIC power amplifier design for 2 GHz applications

In this paper the design and the measurement of a 2 GHz 50 Watt (CW) MMIC power amplifier (PA) are discussed. The authors believe that this is the most powerful MMIC implementation that has been reported. The amplifier utilizes a class-F combining structure and realized using the company internal 0.5 /spl mu/m GaAs pHEMT power process. The MMIC measure 10/spl times/10 mm/sup 2/ and delivers 50 Watts of CW power at an efficiency greater than 45% over more than 10% bandwidth at a nominal 12 V supply voltage. The amplifier gain is 21 dB throughout the operational band.

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2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

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