射线探测仪用多晶TlBr薄膜的表征

1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255) Pub Date : 1998-11-08 DOI:10.1109/NSSMIC.1998.775231

Phillip R. Bennett, K. S. Shah, L. Cirignano, M. Klugerman, L. Moy, F. Olschner, M. Squillante

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引用次数: 42

摘要

评价了溴化铊气相沉积薄膜作为新型大面积射线探测器的潜在光导层。该材料的吸引力在于其固有的高有效原子序数和高密度。已生长出200 /spl μ m的多晶薄膜，并呈现柱状结构，晶粒直径可达100 /spl μ m。电流-电压(IV)测试表明，受离子传导的限制，体电阻率为10/sup 9/-10/sup 10/ /spl Omega//spl middot/cm。电流随时间的不稳定性也被观察到，但它可以通过冷却最小化。与其他光导层相比，该薄膜在相对较低的场强下表现出高增益。比较了TIBr与其他材料的优缺点，并讨论了可能的解决方案。

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Characterization of polycrystalline TlBr films for radiographic detectors

Vapor deposited films of thallium bromide are evaluated as potential photoconductive layers in new large-area radiographic detectors. The attractiveness of the material lies in its inherent high effective atomic number and high density. Polycrystalline films up to 200 /spl mu/m have been grown and show a columnar structure with grains reaching 100 /spl mu/m in diameter. Current-voltage (IV) tests indicate a bulk resistivity of 10/sup 9/-10/sup 10/ /spl Omega//spl middot/cm, limited by ionic conduction. The instability of current with time is also observed, but it can be minimized with cooling. The films demonstrate high gain at relatively low field strengths as compared to other photoconductive layers. Benefits and drawbacks of TIBr are compared to other materials, and possible solutions are discussed.

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来源期刊

1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255)

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