单片双截面InAs/InP量子脉冲激光器的光学双稳性

Emad Alkhazraji, M. Alias, M. Z. M. Khan
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引用次数: 1

摘要

报道了双段式InAs/InP量子脉冲激光器的光学双稳性。发现光功率注入电流(L-I)特性的滞后随吸收器反向偏置条件的变化而变化。当注入电流通过增益段前后扫掠时,对可饱和吸收器的反向偏置为−0.8 (0)V,测量到32 (24)mW的滞后。此外,通过对特定操作点的激光发射光谱的研究,进一步证实了双稳性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optical Bistability in Monolithic Two-sectioned InAs/InP Quantum-dash Laser
Observation of optical bistability in a two-section InAs/InP quantum dash laser is reported. The hysteresis in the optical power-injection current (L-I) characteristics is found to vary with the absorber reverse bias condition. A reverse bias of −0.8 (0) V to the saturable absorber, a hysteresis of 32 (24) mW is measured when the injection current through the gain section is swept forward and backward. Moreover, the bistability is further affirmed through investigation of the lasing emission spectra at specific operating points.
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