三种提取单位长度电容的平面装置

N. Popovic, E. Marksz, A. Hagerstrom, J. Booth, E. Garboczi, N. Orloff, C. Long
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引用次数: 1

摘要

电路设计人员需要具有已知特性的材料来制作预测电路模型,这在毫米波领域尤其具有挑战性。典型的材料表征方法包括晶圆上器件。为了从这些测量中获得材料特性,晶圆上校准需要已知的特性阻抗。通常,这种要求使用低损耗基板和串联或分流负载来计算传输线单位长度的电容。本文研究了三个具有独立分析程序的器件,以估计单位长度的电容。虽然器件具有相同的横截面,但我们观察到提取值的显着差异,并讨论了可能导致这种差异的可能机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Three Planar Devices for Extracting Capacitance per Unit Length
Circuit designers need materials with well-known properties to make predictive circuit models, which is particularly challenging in the millimeter-wave regime. Typical material characterization approaches include on-wafer devices. To get the material properties from these measurements, on-wafer calibrations require a known characteristic impedance. Often, this requirement uses low-loss substrates and a series or shunt load to calculate the capacitance per unit length of the transmission line. This paper investigates three devices with independent analysis procedures to estimate the capacitance per unit length. Although the devices have the same cross section, we observed a significant different in the extracted values and discuss possible mechanisms which may contribute to this difference.
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