B/N掺杂对双层石墨烯电子性能的影响

International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA) Pub Date : 2019-11-11 DOI:10.1364/isst.2019.jw4a.92

Haohao Ma, Xianbin Zhang, Xuyan Wei, J. Cao

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引用次数: 0

摘要

基于密度泛函理论计算B/N共掺杂在不同位置对双层石墨烯带隙的调节，我们发现带隙可以调节到最大0.36 ev。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of B/N Doping on the Electronic Properties of Bilayer Graphene

Based on the density functional theory calculation of the B/N co-doping at different positions for the double-layer graphene bandgap regulation, we found that the band gap can be adjusted to a maximum of 0.36 ev.

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来源期刊

International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA)

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