半导体表面上熔化区域的迁移

2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE) Pub Date : 2016-09-01 DOI:10.1109/APEDE.2016.7879080

A. Skvortsov, M. Koryachko, P. Skvortsov

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引用次数: 0

摘要

本文从结晶熔化机理的角度讨论了半导体表面熔带的电迁移问题。分析了能量为250 mJ、持续时间为400 μs的电流脉冲通过铝膜后单晶硅片表面电迁移过程的实验数据。在这种条件下铝硅熔体迁移速度的评价。例如，Ge-Ag体系的加速迁移可能与电毛细管组分的贡献有关。

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On the migration of the melted areas on the surface of the semiconductor

The paper discusses electromigration of molten zones on the surface of the semiconductor in the framework of the mechanism of melting of crystallization. Analyzed experimental data electromigration processes on the surface of monocrystalline silicon wafer after passing a current pulse through the aluminum film with energy up to 250 mJ with a duration of 400 μs. Of the evaluation of the speeds of migration of the melted zones of Al-Si in such conditions. For example, the system Ge-Ag is shown that accelerated migration could be associated with the contribution electrocapillary component.

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2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)

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