AlGaAs/InGaAs PM-HEMT的温度和热电子诱导降解研究

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493709

G. Meneghesso, E. De Bortoli, P. Cova, R. Menozzi

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引用次数: 7

摘要

AlGaAs/InGaAs伪晶hemt (pm - hemt)已经进行了热电子或高温存储应力测试，测试后观察到漏极电流的非永久性增加，并且与器件中存在深电平相关。由冲击电离(在热电子应力期间)或热激活电子脱陷(在高温储存期间)产生的空穴捕获是PM-HEMT特性观察到的变化的原因。我们还提出了一种新的基于直流的调查技术，可以提供关于被捕获/被捕获电荷的定位信息。

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On temperature and hot electron induced degradation in AlGaAs/InGaAs PM-HEMT's

AlGaAs/InGaAs pseudomorphic HEMTs (PM-HEMTs) have been submitted to either hot electron or high temperature storage stress tests, A non-permanent increase of the drain current is observed after the tests and is correlated with the presence of deep levels in the devices, Trapping of holes generated by impact ionization (during the hot electron stress) or thermally activated electron detrapping (during the high temperature storage) are responsible for the observed shifts of the PM-HEMT's characteristics. We also present a new DC based investigation technique that gives information about the localization of the trapped/detrapped charge.

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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