用于高级倒装芯片失效分析的背面EBIRCH缺陷定位

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI:10.31399/asm.cp.istfa2021p0248

Chuan Zhang, Jane Y. Li, John Aguada, H. Marks

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引用次数: 0

摘要

本文介绍了一种从倒装芯片背面进行EBIRCH隔离的缺陷定位方法。讨论了样品制备和探测考虑，然后用一个案例研究说明了背面EBIRCH技术如何在具有挑战性的倒装芯片故障中提供强大的解决方案，以捕获和根源导致细微缺陷。

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Backside EBIRCH Defect Localization for Advanced Flip-Chip Failure Analysis

This paper introduced a novel defect localization approach by performing EBIRCH isolation from backside of flip-chips. Sample preparation and probing consideration was discussed, and then a case study was used to illustrate how the backside EBIRCH technique provides a powerful solution in capturing and root-causing subtle defects in challenging flip-chip failures.

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ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis

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