离子去耦等离子体工艺中Sb共掺杂提高锗表面磷水平

2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2018-07-01 DOI:10.1109/NANO.2018.8626237

Chuck Paeng, He Zhang, Y. Kim

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引用次数: 0

摘要

利用低离子能量离子解耦等离子体技术，研究了磷与锗(Ge)掺杂剂的共形浅结。在等离子体辅助掺杂中加入锑(Sb)可以显著提高磷(P)掺杂水平。我们比较了不同的退火技术，以了解对掺杂激活和水平的影响，从而形成具有增强P水平的浅结。

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Sb co-Doping to Enhance Phosphorous Level on Ge Using Ion Decoupled Plasma Process

Ion decoupled plasma technique with low ion energy have been used to demonstrate conformal shallow junctions of phosphorous with higher than l E20 of dopants for germanium (Ge). Adding antimony (Sb) in plasma-assisted doping was found to enhance the phosphorous (P) dopant level dramatically. Various annealing techniques were compared to understand the impact to dopant activation and levels to form shallow junctions with enhanced P level.

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2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

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