{"title":"电致发光器件用直接和间接间隙半导体的优点综述","authors":"R. W. Brander","doi":"10.1088/0034-6683/3/3/I01","DOIUrl":null,"url":null,"abstract":"Reviews the current understanding of the physics of electroluminescence and the state of the art in the technology of electroluminescent device fabrication, using as the main comparison the differences in energy band structure which give rise to direct and indirect gap materials","PeriodicalId":189909,"journal":{"name":"Reviews of Physics in Technology","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A review of the merits of direct and indirect gap semiconductors for electroluminescence devices\",\"authors\":\"R. W. Brander\",\"doi\":\"10.1088/0034-6683/3/3/I01\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Reviews the current understanding of the physics of electroluminescence and the state of the art in the technology of electroluminescent device fabrication, using as the main comparison the differences in energy band structure which give rise to direct and indirect gap materials\",\"PeriodicalId\":189909,\"journal\":{\"name\":\"Reviews of Physics in Technology\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Reviews of Physics in Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/0034-6683/3/3/I01\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Reviews of Physics in Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0034-6683/3/3/I01","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A review of the merits of direct and indirect gap semiconductors for electroluminescence devices
Reviews the current understanding of the physics of electroluminescence and the state of the art in the technology of electroluminescent device fabrication, using as the main comparison the differences in energy band structure which give rise to direct and indirect gap materials