Spin-dependent transport of electrons through ferromagnetic/insulator/semiconductor nanostructures

The model of spin-dependent electron transport through ferromagnetic/insulator/semiconductor nanostructures was developed on the basis of the transport equation accounting for carrier scattering and the image forces at the interfaces. Modeling was performed for Co/Al2O3/p-Si and CoFe/MgO/n-Si nanostructures. Tunneling magnetoresistance was modeled to be 7-13 % in Co/Al2O3/p-Si nanostructures biased in range from 0.7 to 2.0 V. A scattering well in the collector region was shown to increase the tunneling magnetoresistance by 4-5 %. In CoFe/MgO/n-Si nanostructures the tunneling magnetoresistance varivaries from 5 to 50% when the external bias is ranged from 0.1 to 2 V.