{"title":"基于IQ调制器概念的四次谐波有源负载牵引","authors":"B. Bunz, G. Kompa","doi":"10.1109/EUMA.2003.340964","DOIUrl":null,"url":null,"abstract":"This paper presents on wafermeasurements of a transistor optimised for linear amplifier operation with for the first time 4th harmonic load pull variations. Results show that the termination of the 4th harmonic has nonnegligible influence on the performance of an FET.","PeriodicalId":156210,"journal":{"name":"2003 33rd European Microwave Conference, 2003","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Active load pull with fourth harmonic tuning based on an IQ modulator concept\",\"authors\":\"B. Bunz, G. Kompa\",\"doi\":\"10.1109/EUMA.2003.340964\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents on wafermeasurements of a transistor optimised for linear amplifier operation with for the first time 4th harmonic load pull variations. Results show that the termination of the 4th harmonic has nonnegligible influence on the performance of an FET.\",\"PeriodicalId\":156210,\"journal\":{\"name\":\"2003 33rd European Microwave Conference, 2003\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 33rd European Microwave Conference, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.2003.340964\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 33rd European Microwave Conference, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.2003.340964","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Active load pull with fourth harmonic tuning based on an IQ modulator concept
This paper presents on wafermeasurements of a transistor optimised for linear amplifier operation with for the first time 4th harmonic load pull variations. Results show that the termination of the 4th harmonic has nonnegligible influence on the performance of an FET.