AlxGal-xAs通道中热电子的微波噪声。测量AlGaAs晶格加热的程序

1994 24th European Microwave Conference Pub Date : 1994-10-01 DOI:10.1109/EUMA.1994.337304

M. de Murcia, E. Richard, A. Benvenuti, J. Vanbremeersch, J. Zimmermann

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摘要

采用脉冲测量技术，得到了铝含量分别为0.15、0.2、0.25和0.3的Si掺杂AIxGaIxAs合金在5OMHz-4GHz频率范围内的热电子噪声温度与电场的函数关系，并推导了扩散系数D(E)。提出了一种检测被测器件自热效应的方法。

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Microwave noise of hot electrons in AlxGal-xAs channel. Procedure for measuring AlGaAs lattice heating

Hot electron noise temperatures using a pulsed measurement technique as finction of electric field in the frequency range 5OMHz-4GHz are presented in Si doped AIxGaIxAs alloy with 0.15, 0.2, 0.25 and 0.3 aluminium contents x. Diffusion coefficients D(E) are deduced. A method to detect self heating effects of devices under test has been developed.

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1994 24th European Microwave Conference

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