混合InGaAs/GaAs和InGaAs/AlGaAs量子阱器件频率响应增强的可能性

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791660

L. Dao, M. Johnston, M. Gal, L. Fu, H. Tan, C. Jagadish

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引用次数: 1

摘要

对混合InGaAs/GaAs和InGaAs/AlGaAs量子阱的光致发光转换研究表明，光激发载流子进入混合量子阱的捕获速度(25 ps)比进入非混合量子阱的捕获速度(45 ps)快。捕获时间显著缩短的原因与混合量子阱形状的改变有关。

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Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices

Photoluminescence up conversion study of the intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum wells showed that the capture of photo-excited carriers into the intermixed quantum wells is faster (25 ps) than capture into the non-intermixed quantum wells (45 ps). The reasons for this significant reduction in the capture time is related to modification of the shape of the intermixed quantum wells.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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