{"title":"三维电荷阱NAND闪存的性能、可靠性和阈值电压分布的特性综述","authors":"Weihua Liu, Fei Wu, Xiang Chen, Meng Zhang, Yu Wang, Xiangfeng Lu, Changsheng Xie","doi":"10.1145/3491230","DOIUrl":null,"url":null,"abstract":"Solid-state drive (SSD) gradually dominates in the high-performance storage scenarios. Three-dimension (3D) NAND flash memory owning high-storage capacity is becoming a mainstream storage component of SSD. However, the interferences of the new 3D charge-trap (CT) NAND flash are getting unprecedentedly complicated, yielding to many problems regarding reliability and performance. Alleviating these problems needs to understand the characteristics of 3D CT NAND flash memory deeply. To facilitate such understanding, in this article, we delve into characterizing the performance, reliability, and threshold voltage (Vth) distribution of 3D CT NAND flash memory. We make a summary of these characteristics with multiple interferences and variations and give several new insights and a characterization methodology. Especially, we characterize the skewed (Vth) distribution, (Vth) shift laws, and the exclusive layer variation in 3D NAND flash memory. The characterization is the backbone of designing more reliable and efficient flash-based storage solutions.","PeriodicalId":273014,"journal":{"name":"ACM Transactions on Storage (TOS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Characterization Summary of Performance, Reliability, and Threshold Voltage Distribution of 3D Charge-Trap NAND Flash Memory\",\"authors\":\"Weihua Liu, Fei Wu, Xiang Chen, Meng Zhang, Yu Wang, Xiangfeng Lu, Changsheng Xie\",\"doi\":\"10.1145/3491230\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Solid-state drive (SSD) gradually dominates in the high-performance storage scenarios. Three-dimension (3D) NAND flash memory owning high-storage capacity is becoming a mainstream storage component of SSD. However, the interferences of the new 3D charge-trap (CT) NAND flash are getting unprecedentedly complicated, yielding to many problems regarding reliability and performance. Alleviating these problems needs to understand the characteristics of 3D CT NAND flash memory deeply. To facilitate such understanding, in this article, we delve into characterizing the performance, reliability, and threshold voltage (Vth) distribution of 3D CT NAND flash memory. We make a summary of these characteristics with multiple interferences and variations and give several new insights and a characterization methodology. Especially, we characterize the skewed (Vth) distribution, (Vth) shift laws, and the exclusive layer variation in 3D NAND flash memory. The characterization is the backbone of designing more reliable and efficient flash-based storage solutions.\",\"PeriodicalId\":273014,\"journal\":{\"name\":\"ACM Transactions on Storage (TOS)\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-03-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACM Transactions on Storage (TOS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/3491230\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACM Transactions on Storage (TOS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/3491230","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization Summary of Performance, Reliability, and Threshold Voltage Distribution of 3D Charge-Trap NAND Flash Memory
Solid-state drive (SSD) gradually dominates in the high-performance storage scenarios. Three-dimension (3D) NAND flash memory owning high-storage capacity is becoming a mainstream storage component of SSD. However, the interferences of the new 3D charge-trap (CT) NAND flash are getting unprecedentedly complicated, yielding to many problems regarding reliability and performance. Alleviating these problems needs to understand the characteristics of 3D CT NAND flash memory deeply. To facilitate such understanding, in this article, we delve into characterizing the performance, reliability, and threshold voltage (Vth) distribution of 3D CT NAND flash memory. We make a summary of these characteristics with multiple interferences and variations and give several new insights and a characterization methodology. Especially, we characterize the skewed (Vth) distribution, (Vth) shift laws, and the exclusive layer variation in 3D NAND flash memory. The characterization is the backbone of designing more reliable and efficient flash-based storage solutions.