一种用于DRAM电路仿真的建模和电路缩减方法

W. Kao, X. Gao, R. Hamazaki, H. Kikuchi
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引用次数: 2

摘要

随着DRAM电路密度的增加和特征尺寸的减小,为了处理大电路容量(数百万个晶体管),以及考虑到亚微米效应所需的精度,这些电路的电路模拟变得越来越关键和具有挑战性。本文提出了一种建模和电路简化方法,以及一种DRAM建模工具,使用户可以配置模型体系结构,参数化和生成简化的宏模型,在不同级别模型之间选择和切换,连接不同的模型,并定义电路刺激信号,用于整个DRAM设计的电路仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A modeling and circuit reduction methodology for circuit simulation of DRAM circuits
As DRAM circuit densities increase and feature sizes decrease, circuit simulation of these circuits is becoming increasingly more critical and challenging in order to handle the large circuit capacity (millions of transistors), together with the accuracy required to take into account submicron effects. This paper presents a modeling and circuit reduction methodology and a DRAM modeling tool that lets the user configure the model architecture, parameterize and generate reduced macromodels, select and switch between different-level models, link the different models, and define circuit stimulus signals for the circuit simulation of the entire DRAM design.
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