{"title":"一种用于DRAM电路仿真的建模和电路缩减方法","authors":"W. Kao, X. Gao, R. Hamazaki, H. Kikuchi","doi":"10.1109/MTDT.1995.518076","DOIUrl":null,"url":null,"abstract":"As DRAM circuit densities increase and feature sizes decrease, circuit simulation of these circuits is becoming increasingly more critical and challenging in order to handle the large circuit capacity (millions of transistors), together with the accuracy required to take into account submicron effects. This paper presents a modeling and circuit reduction methodology and a DRAM modeling tool that lets the user configure the model architecture, parameterize and generate reduced macromodels, select and switch between different-level models, link the different models, and define circuit stimulus signals for the circuit simulation of the entire DRAM design.","PeriodicalId":318070,"journal":{"name":"Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A modeling and circuit reduction methodology for circuit simulation of DRAM circuits\",\"authors\":\"W. Kao, X. Gao, R. Hamazaki, H. Kikuchi\",\"doi\":\"10.1109/MTDT.1995.518076\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As DRAM circuit densities increase and feature sizes decrease, circuit simulation of these circuits is becoming increasingly more critical and challenging in order to handle the large circuit capacity (millions of transistors), together with the accuracy required to take into account submicron effects. This paper presents a modeling and circuit reduction methodology and a DRAM modeling tool that lets the user configure the model architecture, parameterize and generate reduced macromodels, select and switch between different-level models, link the different models, and define circuit stimulus signals for the circuit simulation of the entire DRAM design.\",\"PeriodicalId\":318070,\"journal\":{\"name\":\"Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.1995.518076\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1995.518076","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A modeling and circuit reduction methodology for circuit simulation of DRAM circuits
As DRAM circuit densities increase and feature sizes decrease, circuit simulation of these circuits is becoming increasingly more critical and challenging in order to handle the large circuit capacity (millions of transistors), together with the accuracy required to take into account submicron effects. This paper presents a modeling and circuit reduction methodology and a DRAM modeling tool that lets the user configure the model architecture, parameterize and generate reduced macromodels, select and switch between different-level models, link the different models, and define circuit stimulus signals for the circuit simulation of the entire DRAM design.