{"title":"一种使能材料设计,以促进高度可调谐,低损耗,性能一致的BST薄膜可调谐器件应用","authors":"M. Cole, É. Ngo, S. Hirsch, S. Zhong, S. Alpay","doi":"10.1109/ISAF.2008.4693755","DOIUrl":null,"url":null,"abstract":"In this work we demonstrate that a compositionally stratified Ba1¿xSrxTiO3 (BST) thin film design (BST60/40-BST75/25-BST90/10) combined with optimized metal-organic solution deposition (MOSD) film fabrication and post-deposition annealing process protocols results in low loss, highly tunable and temperature stable thin film heterostructures. The experimental data demonstrates that the compositionally stratified BST thin film heterostructure has a small-signal dielectric permittivity of 360 with a dissipation factor of 0.012 and a dielectric tunability of 65% at 444 kV/cm. These material properties exhibited minimal dispersion as a function of temperature ranging from 90 to ¿10 °C. Thus, our results suggest that this compositionally stratified material design is an excellent candidate for tunable devices which require both enhanced dielectric response and performance consistency in harsh operational temperature regimes.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An enabling material design to promote highly tunable, low loss, performance consistent BST thin films for tunable device applications\",\"authors\":\"M. Cole, É. Ngo, S. Hirsch, S. Zhong, S. Alpay\",\"doi\":\"10.1109/ISAF.2008.4693755\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we demonstrate that a compositionally stratified Ba1¿xSrxTiO3 (BST) thin film design (BST60/40-BST75/25-BST90/10) combined with optimized metal-organic solution deposition (MOSD) film fabrication and post-deposition annealing process protocols results in low loss, highly tunable and temperature stable thin film heterostructures. The experimental data demonstrates that the compositionally stratified BST thin film heterostructure has a small-signal dielectric permittivity of 360 with a dissipation factor of 0.012 and a dielectric tunability of 65% at 444 kV/cm. These material properties exhibited minimal dispersion as a function of temperature ranging from 90 to ¿10 °C. Thus, our results suggest that this compositionally stratified material design is an excellent candidate for tunable devices which require both enhanced dielectric response and performance consistency in harsh operational temperature regimes.\",\"PeriodicalId\":228914,\"journal\":{\"name\":\"2008 17th IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 17th IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2008.4693755\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2008.4693755","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An enabling material design to promote highly tunable, low loss, performance consistent BST thin films for tunable device applications
In this work we demonstrate that a compositionally stratified Ba1¿xSrxTiO3 (BST) thin film design (BST60/40-BST75/25-BST90/10) combined with optimized metal-organic solution deposition (MOSD) film fabrication and post-deposition annealing process protocols results in low loss, highly tunable and temperature stable thin film heterostructures. The experimental data demonstrates that the compositionally stratified BST thin film heterostructure has a small-signal dielectric permittivity of 360 with a dissipation factor of 0.012 and a dielectric tunability of 65% at 444 kV/cm. These material properties exhibited minimal dispersion as a function of temperature ranging from 90 to ¿10 °C. Thus, our results suggest that this compositionally stratified material design is an excellent candidate for tunable devices which require both enhanced dielectric response and performance consistency in harsh operational temperature regimes.