一种使能材料设计,以促进高度可调谐,低损耗,性能一致的BST薄膜可调谐器件应用

M. Cole, É. Ngo, S. Hirsch, S. Zhong, S. Alpay
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引用次数: 0

摘要

在这项工作中,我们证明了成分分层的Ba1¿xSrxTiO3 (BST)薄膜设计(BST60/40-BST75/25-BST90/10)与优化的金属有机溶液沉积(MOSD)薄膜制造和沉积后退火工艺方案相结合,可以获得低损耗、高度可调和温度稳定的薄膜异质结构。实验数据表明,复合分层BST薄膜的小信号介电常数为360,耗散系数为0.012,在444 kV/cm下的介电可调性为65%。这些材料性能表现出最小的分散,作为温度范围为90至¿10°C的函数。因此,我们的研究结果表明,这种成分分层材料设计是可调谐器件的极好候选者,这些器件需要在苛刻的工作温度下增强介电响应和性能一致性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An enabling material design to promote highly tunable, low loss, performance consistent BST thin films for tunable device applications
In this work we demonstrate that a compositionally stratified Ba1¿xSrxTiO3 (BST) thin film design (BST60/40-BST75/25-BST90/10) combined with optimized metal-organic solution deposition (MOSD) film fabrication and post-deposition annealing process protocols results in low loss, highly tunable and temperature stable thin film heterostructures. The experimental data demonstrates that the compositionally stratified BST thin film heterostructure has a small-signal dielectric permittivity of 360 with a dissipation factor of 0.012 and a dielectric tunability of 65% at 444 kV/cm. These material properties exhibited minimal dispersion as a function of temperature ranging from 90 to ¿10 °C. Thus, our results suggest that this compositionally stratified material design is an excellent candidate for tunable devices which require both enhanced dielectric response and performance consistency in harsh operational temperature regimes.
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