采用专用分立igbt驱动大功率igbt的4.5 kv多芯片电平移位电路

2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI:10.1109/ISPSD.2012.6229061

N. Sakurai, K. Takami, S. Yukutake, Y. Kouno, J. Sakano

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引用次数: 1

摘要

研制了一种由上下臂驱动ic和专用分立igbt组成的多芯片结构的4.5 kv电压电平移位电路。实验证实，该电平移位电路可以驱动3.3 kv /1200 a的IGBT模块。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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4.5-kV multi-chip level-shift circuit using dedicated discrete IGBTs for driving high-power IGBTs

A 4.5-kV voltage level-shift circuit with a multi-chip structure composed of upper and lower arm driver ICs and dedicated discrete IGBTs was developed. It was experimentally confirmed that this level-shift circuit could drive a 3.3-kV/1200-A IGBT module.

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2012 24th International Symposium on Power Semiconductor Devices and ICs

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