液氮温度下脉冲大功率工作下x波段加速结构微波特性的测量

A. J. Saversky, I. S. Shchedrin
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引用次数: 3

摘要

采用x波段磁控管作为射频源,在液氮温度下对磁盘加载结构进行了必要的化学处理。脉冲峰值功率在150 ~ 300kw之间变化,平均功率在1400 ~ 2800 pps之间变化。在低功率和高功率下对该结构的测量表明,室温下的Q因子为6800,增加到17000。在液氮温度下,增强因子大于2.5,与理论基本一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Measurement of microwave properties of X-band accelerating structure under pulsed high-power operation at liquid nitrogen temperature
After required chemical treatments a disk-loading structure was operated at liquid nitrogen temperature with X-band magnetron as an RF source. The peak RF pulse power was variable from 150 to 300 KW and the average power was altered by changing the pulse repetition rate between 1400 and 2800 pps. Measurements on this structure both at low and at high power indicated the Q factor of 6800 at room temperature,which increased to 17000. At liquid nitrogen temperature-an enhancement factor greater then 2,5 in good agreement with theory.<>
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