{"title":"比例功率双极SHF晶体管结构的计算机模拟","authors":"V. Nelayev, V. A. Efremov, Yu. P. Snitovsky","doi":"10.1117/12.726785","DOIUrl":null,"url":null,"abstract":"New advanced technology for creation of the npn power silicon bipolar SHF transistor structure is proposed. Preferences of the advanced technology in comparison with standard technology are demonstrated. Simulation of both technology flows was performed with emphasis on scaling of the discussed device structure.","PeriodicalId":117315,"journal":{"name":"Nanodesign, Technology, and Computer Simulations","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Computer simulation of the scaled power bipolar SHF transistor structures\",\"authors\":\"V. Nelayev, V. A. Efremov, Yu. P. Snitovsky\",\"doi\":\"10.1117/12.726785\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New advanced technology for creation of the npn power silicon bipolar SHF transistor structure is proposed. Preferences of the advanced technology in comparison with standard technology are demonstrated. Simulation of both technology flows was performed with emphasis on scaling of the discussed device structure.\",\"PeriodicalId\":117315,\"journal\":{\"name\":\"Nanodesign, Technology, and Computer Simulations\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-02-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanodesign, Technology, and Computer Simulations\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.726785\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanodesign, Technology, and Computer Simulations","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.726785","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Computer simulation of the scaled power bipolar SHF transistor structures
New advanced technology for creation of the npn power silicon bipolar SHF transistor structure is proposed. Preferences of the advanced technology in comparison with standard technology are demonstrated. Simulation of both technology flows was performed with emphasis on scaling of the discussed device structure.
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