{"title":"接触轮廓测量法测定监测拓扑元素和层厚的高度差的可能性和局限性","authors":"Dedkova A.A., Kireev V. Yu., Makhiboroda M.A.","doi":"10.31145/2224-8412-2020-20--2-23-40","DOIUrl":null,"url":null,"abstract":"The work shows specific examples of the possibilities and limitations of the contact profilometry method for measuring the relief of micro and nanostructures formed on substrates during the production of microelectronic devices. The requirements to the relief parameters of microelectronic structures are formulated, which make it possible to use contact profilometers for their measurement and control. Methods of forming steps for measuring the thickness of films by contact profilometry are described, and their advantages and disadvantages are analyzed. The method of contact profilometry with optical profilometry and atomic force microscopy is compared.","PeriodicalId":320548,"journal":{"name":"Nanostructures. Mathematical Physics and Modelling","volume":"103 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Possibilities and limitations of the contact profilometry method for determining the height difference for monitoring topological elements and layer thickness\",\"authors\":\"Dedkova A.A., Kireev V. Yu., Makhiboroda M.A.\",\"doi\":\"10.31145/2224-8412-2020-20--2-23-40\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The work shows specific examples of the possibilities and limitations of the contact profilometry method for measuring the relief of micro and nanostructures formed on substrates during the production of microelectronic devices. The requirements to the relief parameters of microelectronic structures are formulated, which make it possible to use contact profilometers for their measurement and control. Methods of forming steps for measuring the thickness of films by contact profilometry are described, and their advantages and disadvantages are analyzed. The method of contact profilometry with optical profilometry and atomic force microscopy is compared.\",\"PeriodicalId\":320548,\"journal\":{\"name\":\"Nanostructures. Mathematical Physics and Modelling\",\"volume\":\"103 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanostructures. Mathematical Physics and Modelling\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31145/2224-8412-2020-20--2-23-40\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanostructures. Mathematical Physics and Modelling","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31145/2224-8412-2020-20--2-23-40","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Possibilities and limitations of the contact profilometry method for determining the height difference for monitoring topological elements and layer thickness
The work shows specific examples of the possibilities and limitations of the contact profilometry method for measuring the relief of micro and nanostructures formed on substrates during the production of microelectronic devices. The requirements to the relief parameters of microelectronic structures are formulated, which make it possible to use contact profilometers for their measurement and control. Methods of forming steps for measuring the thickness of films by contact profilometry are described, and their advantages and disadvantages are analyzed. The method of contact profilometry with optical profilometry and atomic force microscopy is compared.
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