高饱和电流，宽带宽光电二极管

2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859) Pub Date : 2004-10-04 DOI:10.1109/MWP.2004.1396891

Xiaowei Li, Ning Li, S. Deminguel, J. Campbell, D. Tulchinsky, K. Williams

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引用次数: 1

摘要

本文描述了两种光电探测器结构的设计和性能，一种是部分耗尽吸收型光电二极管，另一种是电荷耦合的单行载流子光电二极管，这两种光电探测器结构在保持宽带的同时获得了很高的饱和电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-saturation-current, wide-bandwidth photodiodes

This paper describes the design and performance of two photodetector structures, a partially depleted absorber photodiode and a charge-coupled unitraveling carrier photodiode, that have achieved very high saturation currents while maintaining wide bandwidths.

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来源期刊

2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859)

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