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引用次数: 17
摘要
在对超低k (ULK)电介质(JSR 5537 k = 2.3)的TDDB性能的研究中发现，水分的存在显著降低了TDDB的寿命，并增加了泄漏和电容。还观察到，在“E”TDDB寿命模型中，“干”样品的场系数(/spl gamma/)明显大于“湿”样品。
Effect of moisture on the time dependent dielectric breakdown (TDDB) behavior in an ultra-low-k (ULK) dielectric
In a study of the TDDB performance of an ultra-low-k (ULK) dielectric (JSR 5537 k = 2.3) it was found that the presence of moisture significantly reduced the TDDB lifetime as well as increased leakage and capacitance. It was also observed that the field coefficient (/spl gamma/) in an "E" TDDB lifetime model was significantly larger in "dry" samples than in "wet" samples.
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