{"title":"非线性双极晶体管模型的小信号验证","authors":"J. Vidkjær, V. Porra, J. Zhu, T. Huttunen","doi":"10.1109/EUMA.1992.335870","DOIUrl":null,"url":null,"abstract":"A new method for the validity analysis of nonlinear transistor models is presented based on DC-and small-signal S-parameter measurements and realistic consideration of the measurement and de-embedding errors and singularities of the small-signal equivalent circuit. As an example, some analysis results for an extended Gummel Poon model are presented in the case of a UHF bipolar power transistor.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"10 11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Validation of Nonlinear Bipolar Transistor Model by Small-Signal Measurements\",\"authors\":\"J. Vidkjær, V. Porra, J. Zhu, T. Huttunen\",\"doi\":\"10.1109/EUMA.1992.335870\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new method for the validity analysis of nonlinear transistor models is presented based on DC-and small-signal S-parameter measurements and realistic consideration of the measurement and de-embedding errors and singularities of the small-signal equivalent circuit. As an example, some analysis results for an extended Gummel Poon model are presented in the case of a UHF bipolar power transistor.\",\"PeriodicalId\":317106,\"journal\":{\"name\":\"1992 22nd European Microwave Conference\",\"volume\":\"10 11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 22nd European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1992.335870\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 22nd European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1992.335870","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Validation of Nonlinear Bipolar Transistor Model by Small-Signal Measurements
A new method for the validity analysis of nonlinear transistor models is presented based on DC-and small-signal S-parameter measurements and realistic consideration of the measurement and de-embedding errors and singularities of the small-signal equivalent circuit. As an example, some analysis results for an extended Gummel Poon model are presented in the case of a UHF bipolar power transistor.