反应磁控溅射沉积Ti (C,N)纳米复合薄膜:组成和热稳定性

O. Fouad, Hong-Ying Lin, S. Shah
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引用次数: 1

摘要

:在p型硅(100)衬底上,采用反应磁控溅射法在Ar/ n2混合气体中沉积碳化钛靶材,生长了碳氮化钛薄膜。当溅射功率增加到125W时,沉积速率和薄膜厚度分别达到最大值14nm/min和430nm。最佳沉积压力为20mTorr,沉积时间为120min,可沉积厚度约为2200nm的薄膜。当n2流量百分比从0增加到100%时,阴极电流从约290mA下降到约235mA。对沉积膜的x射线衍射分析证实,随着工艺气体中氮气浓度的增加,碳化钛和碳氮化层的形成。沉积时间为5 min的碳氮化钛薄膜的SEM图像显示,薄膜开始生长为低至140nm左右的微小颗粒,后期形成更大的颗粒,最终形成连续的薄膜。经空气和700℃真空退火2小时后,所制备的薄膜表现出良好的热稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reactively Magnetron Sputter-Deposited Ti (C,N) Nanocomposite Thin Films: Composition and Thermal Stability
: Titanium carbonitride thin films were grown by reactive magnetron sputtering deposition of titanium carbide target in Ar/N 2 gas mixture on p-type silicon (100) substrates. With the increase of sputtering power up to 125W, the deposition rate and films thickness reached a maximum of 14nm/min and 430nm, respectively. A thick film of about 2200nm could be deposited for 120 min at the optimum deposition pressure of 20mTorr. Cathode current decreased from about 290mA to reach a value of about 235mA as the N 2 flow percentage increased from 0 to 100%. X-ray diffraction analyses of the deposited films confirmed the formation of titanium carbide and carbonitride layers as the nitrogen gas concentrations in the process gas were increased. SEM image of the deposited titanium carbonitride thin film for 5 min deposition time showed that the film started to grow as tiny particles of size as low as about 140nm, which in later stage coalesced together to form bigger grains and finally a continuous film. The deposited film shows good thermal stability upon annealing in air and in vacuum at 700 o C for 2 hours.
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