用于无线个人通信基站的100w波段AlGaAs/GaAs异质结构场效应管

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722632

S. Goto, K. Fujii, H. Morishige, S. Suzuki, S. Sakamoto, N. Yoshida, N. Tanino, K. Sato

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引用次数: 14

摘要

为TDMA和CDMA蜂窝基站开发了100w低失真AlGaAs-GaAs异质结构场效应管，这是迄今为止报道的最小封装尺寸。该FET的饱和输出功率为100 W (50 dBm)，在2.1 GHz下，在1 dB增益压缩下获得11.5 dB的功率增益。在42 dBm输出功率下，双音测试条件(/spl Delta/f=1 MHz)下的三阶互调失真(IMD3)和功率附加效率(PAE)分别为-35 dBc和24%，其中从饱和功率后退8 dB。为了降低成本和节省空间，通过延长栅极指，将芯片和封装的尺寸分别小型化到1.41/spl倍/2.6 mm/sup 2/和17.4/spl倍/24.0 mm/sup 2/。

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A 100 W S-band AlGaAs/GaAs hetero-structure FET for base stations of wireless personal communications

A 100 W low distortion AlGaAs-GaAs hetero-structure FET, which is the smallest package size ever reported, has been developed for TDMA and CDMA cellular base stations. The FET exhibited 100 W (50 dBm) saturation output power, and 11.5 dB power gain at 1 dB gain compression at 2.1 GHz. The third order inter-modulation distortion (IMD3) and the power added efficiency (PAE) under two-tone test condition (/spl Delta/f=1 MHz) were -35 dBc and 24%, respectively at 42 dBm output power, of which the level was 8 dB back-off from saturation power. To reduce the cost and the space, the size of the chip and the package were miniaturized to 1.41/spl times/2.6 mm/sup 2/ and 17.4/spl times/24.0 mm/sup 2/, respectively by lengthening the gate finger.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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