基于ASM-HEMT模型的毫米波GaN HEMT技术大信号评估克服w波段标量负载-拉力限制

N. Miller, Michael Elliott, R. Gilbert, E. Arkun, D. Denninghoff
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引用次数: 5

摘要

本文首次提出了毫米波GaN HEMT技术的精确ASM-HEMT模型,并通过w波段标量负载-拉力和功率扫描测量进行了验证。该精确模型用于预测超出标量w波段负载-拉系统限制的GaN HEMT的最佳性能。GaN HEMT测量显示峰值PAE为35%,ASMHEMT模型预测峰值PAE为42%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Surmounting W-band Scalar Load-Pull Limitations Using the ASM-HEMT Model for Millimeter-Wave GaN HEMT Technology Large-Signal Assessment
This paper presents for the first time an accurate ASM-HEMT model for millimeter-wave GaN HEMT technology validated with W-band scalar load-pull and power sweep measurements. The accurate model is used to predict the optimal performance of a GaN HEMT with operating conditions beyond the limitations of the scalar W-band load-pull system. The GaN HEMT measurements exhibits a peak PAE of 35% and the ASMHEMT model predicts a peak PAE of 42%.
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