基于GaN/AlN的单极(光电)电子器件的设计考虑，以及接口质量方面

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-08-25 DOI:10.1109/PHOSST.2016.7548743

A. Grier, A. Valavanis, C. Edmunds, J. Shao, J. Cooper, G. Gardner, M. J. Mantra, O. Malis, D. Indjin, Z. Ikonić, P. Harrison

{"title":"基于GaN/AlN的单极(光电)电子器件的设计考虑，以及接口质量方面","authors":"A. Grier, A. Valavanis, C. Edmunds, J. Shao, J. Cooper, G. Gardner, M. J. Mantra, O. Malis, D. Indjin, Z. Ikonić, P. Harrison","doi":"10.1109/PHOSST.2016.7548743","DOIUrl":null,"url":null,"abstract":"We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects\",\"authors\":\"A. Grier, A. Valavanis, C. Edmunds, J. Shao, J. Cooper, G. Gardner, M. J. Mantra, O. Malis, D. Indjin, Z. Ikonić, P. Harrison\",\"doi\":\"10.1109/PHOSST.2016.7548743\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.\",\"PeriodicalId\":337671,\"journal\":{\"name\":\"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PHOSST.2016.7548743\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHOSST.2016.7548743","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们描述了基于GaN/AlGaN的共振隧道二极管的理论和实验研究，特别是分析了界面粗糙度的影响和典型值，然后讨论了这些现实的材料质量参数对单极光电器件性能的影响。

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Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects

We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

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2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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