常压cvd生长SiGe基极HBT具有最高的电流增益-早期电压积

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496426

T. Han, D. Cho, S.-M. Lee, B.R. Ryum

{"title":"常压cvd生长SiGe基极HBT具有最高的电流增益-早期电压积","authors":"T. Han, D. Cho, S.-M. Lee, B.R. Ryum","doi":"10.1109/TENCON.1995.496426","DOIUrl":null,"url":null,"abstract":"A low thermal-budget SiGe base heterojunction bipolar transistor (HBT) with a record current gain-Early voltage product (/spl beta//spl middot/Va) has been fabricated using atmospheric pressure (AP) CVD. After growing the SiGe layer on the wafer patterned by local oxidation of silicon (LOCOS), the HBT received thermal annealing only one time for drive-in and activation of arsenic (As) dopant in the polysilicon-emitter. For the 1/spl times/4 /spl mu/m/sup 2/ emitter, typical value of /spl beta//spl middot/Va is 200,000 V (/spl beta/=2,000 and Va=100 V) at the collector current of 0.9 mA.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Atmospheric pressure CVD-grown SiGe base HBT with the highest value of current gain-Early voltage product\",\"authors\":\"T. Han, D. Cho, S.-M. Lee, B.R. Ryum\",\"doi\":\"10.1109/TENCON.1995.496426\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low thermal-budget SiGe base heterojunction bipolar transistor (HBT) with a record current gain-Early voltage product (/spl beta//spl middot/Va) has been fabricated using atmospheric pressure (AP) CVD. After growing the SiGe layer on the wafer patterned by local oxidation of silicon (LOCOS), the HBT received thermal annealing only one time for drive-in and activation of arsenic (As) dopant in the polysilicon-emitter. For the 1/spl times/4 /spl mu/m/sup 2/ emitter, typical value of /spl beta//spl middot/Va is 200,000 V (/spl beta/=2,000 and Va=100 V) at the collector current of 0.9 mA.\",\"PeriodicalId\":425138,\"journal\":{\"name\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.1995.496426\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496426","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

利用常压(AP) CVD技术制备了一种低热收支SiGe基极异质结双极晶体管(HBT)，该晶体管具有创纪录的电流增益-早期电压积(/spl beta//spl middot/Va)。在硅局部氧化(LOCOS)的硅片上生长SiGe层后，HBT只进行一次热退火，以驱动和激活多晶硅发射极中的砷(As)掺杂剂。对于1/spl倍/4 /spl mu/m/sup 2/发射极，在集电极电流为0.9 mA时，/spl beta//spl中点/Va的典型值为200000 V (/spl beta/= 2000, Va= 100v)。

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Atmospheric pressure CVD-grown SiGe base HBT with the highest value of current gain-Early voltage product

A low thermal-budget SiGe base heterojunction bipolar transistor (HBT) with a record current gain-Early voltage product (/spl beta//spl middot/Va) has been fabricated using atmospheric pressure (AP) CVD. After growing the SiGe layer on the wafer patterned by local oxidation of silicon (LOCOS), the HBT received thermal annealing only one time for drive-in and activation of arsenic (As) dopant in the polysilicon-emitter. For the 1/spl times/4 /spl mu/m/sup 2/ emitter, typical value of /spl beta//spl middot/Va is 200,000 V (/spl beta/=2,000 and Va=100 V) at the collector current of 0.9 mA.

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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