{"title":"砷化镓和硅射频和微波开关的畸变特性","authors":"R. Caverly","doi":"10.1109/MTTTWA.1997.595132","DOIUrl":null,"url":null,"abstract":"An important parameter for RF and microwave system design is the prediction of distortion produced by system components. This paper presents the results of a study on the distortion produced by GaAs and Si RF and microwave switches. The results presented will provide RF and microwave circuit designers with information needed to help decide which switch to use for a specific switching application.","PeriodicalId":264044,"journal":{"name":"1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Distortion properties of gallium arsenide and silicon RF and microwave switches\",\"authors\":\"R. Caverly\",\"doi\":\"10.1109/MTTTWA.1997.595132\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An important parameter for RF and microwave system design is the prediction of distortion produced by system components. This paper presents the results of a study on the distortion produced by GaAs and Si RF and microwave switches. The results presented will provide RF and microwave circuit designers with information needed to help decide which switch to use for a specific switching application.\",\"PeriodicalId\":264044,\"journal\":{\"name\":\"1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-02-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTTTWA.1997.595132\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTTTWA.1997.595132","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Distortion properties of gallium arsenide and silicon RF and microwave switches
An important parameter for RF and microwave system design is the prediction of distortion produced by system components. This paper presents the results of a study on the distortion produced by GaAs and Si RF and microwave switches. The results presented will provide RF and microwave circuit designers with information needed to help decide which switch to use for a specific switching application.
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